advanced power dual n-channel enhancement electronics corp. mode power mosfet simple drive requirement bv dss 30v fast switching characteristic r ds(on) 10.4m rohs compliant & halogen-free description absolute maximum ratings symbol parameter units v ds drain-source voltage v v gs gate-source voltage v i d @t c =25 drain current, v gs @ 10v 4 a i d @t a =25 drain current 3 , v gs @ 10v a i d @t a =70 drain current 3 , v gs @ 10v a i dm pulsed drain current 1 a p d @t a =25 total power dissipation w t stg storage temperature range t j operating junction temperature range symbol rating units rthj-c 6 /w rthj-a 35 /w halogen-free product -55 to 150 ap3A010Amt rating 12 11.5 50 3.57 thermal data 201705051 1 parameter maximum thermal resistance, junction-case maximum thermal resistance, junction-ambient 3 -55 to 150 30 + 20 35 a p3A010A series are from advanced power innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. it provides the designer with an extreme efficient device fo pmpak ? 5x6 dual pad provide superior thermal performance and is design for surface mount applications. s1 g1 s2 g2 pmpak ? 5x6 d1 d1 d2 d2 s1 g1 s2 g2 d1 d1 d2 d2 .
electrical characteristics@t j =25 o c(unless otherwise specified) symbol parameter test conditions min. typ. max. units bv dss drain-source breakdown voltage v gs =0v, i d =250ua 30 - - v r ds(on) static drain-source on-resistance 2 v gs =10v, i d =12a - - 10.4 m v gs =4.5v, i d =7a - - 15.3 m v gs(th) gate threshold voltage v ds =v gs , i d =1ma 1.45 - 3 v g fs forward transconductance v ds =5v, i d =10a - 40 - s i dss drain-source leakage current v ds =24v, v gs =0v - - 25 ua i gss gate-source leakage v gs =+ 20v, v ds =0v - - + 100 na q g total gate charge i d =7a - 14 22.4 nc q gs gate-source charge v ds =15v - 4.5 - nc q gd gate-drain ("miller") charge v gs =4.5v - 5.3 - nc t d(on) turn-on delay time v ds =15v - 9 - ns t r rise time i d =1a - 8 - ns t d(off) turn-off delay time r g =3.3 -29- ns t f fall time v gs =10v - 9 - ns c iss input capacitance v gs =0v - 1530 2448 pf c oss output capacitance v ds =15v - 225 - pf c rss reverse transfer capacitance f=1.0mhz - 160 - pf r g gate resistance f=1.0mhz - 2.5 5 source-drain diode symbol parameter test conditions min. typ. max. units v sd forward on voltage 2 i s =2.9a, v gs =0v - - 1.2 v t rr reverse recovery time i s =12a, v gs =0 v , - 11 - ns q rr reverse recovery charge di/dt=100a/s - 4 - nc notes: 1.pulse width limited by max. junction temperature. 2.pulse test 3.surface mounted on 1 in 2 copper pad of fr4 board, t < 10sec ; 85 /w on steady state. 4.package limitation current is 12a . this product is sensitive to electrostatic discharge, please handle with caution. use of this product as a critical component in life support or other similar systems is not authorized. apec does not assume any liability arising out of the application or use of any product or circuit described herein; neither does it convey any license under its patent rights, nor the rights of others. apec reserves the right to make changes without further notice to any products herein to improve reliability, function or design. ap3A010Amt 2 .
ap3A010Am t fig 1. typical output characteristics fig 2. typical output characteristics fig 3. on-resistance v.s. gate voltage fig 4. normalized on-resistance v.s. junction temperature fig 5. forward characteristic of fig 6. gate threshold voltage v.s. reverse diode junction temperature 3 0 10 20 30 0 0.4 0.8 1.2 1.6 2 v ds , drain-to-source voltage (v) i d , drain current (a) t a =150 o c 10v 7.0v 6.0v 5.0v v g =4.0v 0 10 20 30 40 50 0 0.4 0.8 1.2 1.6 2 v ds , drain-to-source voltage (v) i d , drain current (a) t a =25 o c 10v 7.0v 6.0v 5.0v v g = 4.0v 0.4 0.8 1.2 1.6 2.0 -100 -50 0 50 100 150 t j , junction temperature ( o c) normalized r ds(on) i d =12a v g =10v 0 2 4 6 8 10 12 0 0.2 0.4 0.6 0.8 1 1.2 v sd , source-to-drain voltage (v) i s (a) t j =25 o c t j =150 o c 6 7 8 9 10 246810 v gs , gate-to-source voltage (v) r ds(on) (m ) i d =7a t a =25 o c 0.0 0.4 0.8 1.2 1.6 2.0 -100 -50 0 50 100 150 t j , junction temperature ( o c) normalized v gs(th) i d =250ua .
ap3A010Am t fig 7. gate charge characteristics fig 8. typical capacitance characteristics fig 9. maximum safe operating area fig 10. effective transient thermal impedance fig 11. transfer characteristics fig 12. gate charge waveform 4 0.01 0.1 1 10 100 0.01 0.1 1 10 100 v ds ,drain-to-source voltage (v) i d (a) t a =25 o c s in g le puls e 100us 1ms 10ms 100ms 1s dc 0.001 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 100 1000 t , pulse width (s) normalized thermal response (r thja ) p dm duty factor = t/t peak t j = pdm x r thja + t a r thja =85 o c/w t t 0.02 0.01 0.05 0.1 0.2 duty factor = 0.5 single pulse 0 2 4 6 8 10 0 8 16 24 32 q g , total gate charge (nc) v gs , gate to source voltage (v) i d =7a v ds =15v 0 1000 2000 3000 1 5 9 13 17 21 25 29 33 37 v ds ,drain-to-source voltage (v) c (pf) f=1.0mhz c iss c oss c rss q v g 4.5v q gs q gd q g charge operation in this area limited by r ds(on) 0 20 40 60 80 0123456 v gs , gate-to-source voltage (v) i d , drain current (a) t j =150 o c t j =25 o c v ds =5v .
ap3A010Amt marking information 5 date code (ywwsss) y last digit of the year ww week sss sequence part numbe r 3A010A ywwsss .
|
